Instability of field electron emission from FEA

Abstract

The instability of silicon field emitter arrays (FEA) has been studied by measuring their current-voltage features. The morphology at the tip of emitter is decided by the equilibrium between the surface tension and electrostatic stress. The contaminant at the emitter surface plays a significant role in breaking the equilibrium between these two stresses, hence makes the micro-emitters grow quickly and initiates a catastrophic cathode vacuum arc.