Methodology for multi-die package semiconductor Thermal Model in a Dynamic Environment

Abstract

This paper provides a detailed methodology for the development of a dynamic thermal model based on the finite element method and statistical modelling. Finite element method based thermal modelling, consisting of a nonphysical model, is improved by means of statistical correlations to obtain accurate temperature estimates in response to dynamic boundary conditions, in contrast to the classical thermal models which are very dependent on the boundary conditions such as Cauer and Foster network, thus allowing it application for digital twinning and device failure reporting. The dynamic thermal model has been developed for a TO-247 IGBT device and, later, benchmarked and verified against measurements obtained from an experimental platform, composed of three IGBT half-bridge mounted on a single heatsink with forced air cooling.