Asymmetrical Power Module for Modular Multilevel Converter with Lower Power Loss and Peak Junction Temperature

Abstract

In modular multilevel converter (MMC) system, the efficiency and reliability improvements of the power semiconductor devices have always been considered. To lower the power losses and peak junction temperature, the asymmetrical half-bridge IGBT modules were proposed, according to the unequal current distribution of MMC submodules (SMs). The modules were analyzed through power loss calculation and chips’ surface temperature distribution schemes by simulation. The results showed that the power loss and peak junction temperature of the proposed modules were reduced, and the reliability was enhanced at the same time. It was helpful for MMC system to lower the power loss and improve the reliability.