First demonstration of strained SiGe nanowires TFETs with ION beyond 700µA/µm

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894369

A. Villalon, C. Le Royer, P. Nguyen, S. Barraud, F. Glowacki, A. Revelant, L. Selmi, S. Cristoloveanu, L. Tosti, C. Vizioz, J. Hartmann, N. Bernier, B. Previtali, C. Tabone, F. Allain, S. Martinie, O. Rozeau, M. Vinet

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引用次数: 47

Abstract

We present for the first time high performance Nanowire (NW) Tunnel FETs (TFET) obtained with a CMOS-compatible process flow featuring compressively strained Si_1-xGe_x (x=0, 0.2, 0.25) nanowires, Si_0.7Ge_0.3 Source and Drain and High-K/Metal gate. Nanowire architecture strongly improves electrostatics, while low bandgap channel (SiGe) provides increased band-to-band tunnel (BTBT) current to tackle low ON current challenges. We analyse the impact of these improvements on TFETs and compare them to MOSFET ones. Nanowire width scaling effects on TFET devices are also investigated, showing a W^-3 dependence of ON current (I_ON) per wire. The fabricated devices exhibit higher I_ON than any previously reported TFET, with values up to 760μA/μm and average subthreshold slopes (SS) of less than 80mV/dec.

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离子超过700µA/µm的应变SiGe纳米线tfet的首次演示

我们首次采用cmos兼容的工艺流程获得了高性能纳米线(NW)隧道场效应管(TFET)，该工艺流程具有压缩应变Si1-xGex (x= 0,0.2, 0.25)纳米线，Si0.7Ge0.3源极和漏极以及高k /金属栅极。纳米线结构极大地改善了静电性能，而低带隙通道(SiGe)提供了更大的带对带隧道(tbbt)电流，以解决低导通电流的挑战。我们分析了这些改进对tfet的影响，并将它们与MOSFET进行了比较。研究了纳米线宽度对TFET器件的影响，显示了单线on电流(ION)的W-3依赖性。所制备的器件具有比以往报道的更高的离子，离子值高达760μA/μm，平均亚阈值斜率(SS)小于80mV/dec。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

发文量