Room temperature nanoimprint technology

Y. Igaku, S. Matsui, H. Ishigaki, J. Fujita, M. Ishida, Y. Ochiai, M. Komuro, H. Hiroshima, H. Namatsu
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Abstract

Nano-imprint-lithography (NIL) (Chou et al, 1997), in which resist patterns are fabricated by deforming the resist physical shape through embossing with a mold, is a very useful technique to make nanostructure devices and various nanostructure devices such as a quantized magnetic disk (Wu et al, 1998) have been demonstrated by this method. It has excellent features with sub-10 nm feature size over a large area with high throughput and low cost. However, as a conventional NIL process has to heat a resist above the glass transition temperature to deform the resist physical shape with a mold pattern, the heating process causes serious problems for pattern accuracy. To overcome this problem, room-temperature replication into SOG (spin-on-glass) and HSQ (hydrogen silsesquioxane) (Namatsu et al, 1998) has been proposed and experiments have been conducted. In this paper, we describe a room-temperature replication into SOG/HSQ and a pattern transfer to a metal pattern and a substrate by using lift-off and RIE processes.
室温纳米压印技术
纳米压印光刻技术(NIL) (Chou等人,1997年)是一种非常有用的技术,可用于制造纳米结构器件,如量子化磁盘(Wu等人,1998年)。在这种技术中,通过模子压印使抗蚀剂的物理形状发生变形,从而制造抗蚀剂图案。它具有小于10nm的特征尺寸,面积大,吞吐量高,成本低的优点。然而,由于传统的NIL工艺必须将电阻加热到玻璃化转变温度以上才能使电阻的物理形状与模具图案一起变形,因此加热过程会对图案精度造成严重问题。为了克服这个问题,提出了在室温下复制到SOG(玻璃自旋)和HSQ(氢硅氧烷)(Namatsu等人,1998年),并进行了实验。在本文中,我们描述了一个室温复制到SOG/HSQ和图案转移到金属图案和衬底通过使用lift-off和RIE工艺。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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