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Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies

2002 Electrical Overstress/Electrostatic Discharge Symposium Pub Date : 2002-10-01 DOI:10.1016/S0026-2714(03)00126-4
M. Streibl, K. Esmark, A. Sieck, W. Stadler, M. Wendel, J. Szatkowski, H. Gosner
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引用次数: 13
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在双极和BiCMOS技术中利用基极推出效应进行ESD保护
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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2002 Electrical Overstress/Electrostatic Discharge Symposium
2002 Electrical Overstress/Electrostatic Discharge Symposium
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