A 113 Gb/s (10 × 11.3 Gb/s) ultra-low power EAM driver array

2012 38th European Conference and Exhibition on Optical Communications Pub Date : 2012-09-16 DOI:10.1364/ECEOC.2012.MO.2.B.2

R. Vaernewyck, J. Bauwelinck, X. Yin, R. Pierco, J. Verbrugghe, G. Torfs, Z. Li, X. Qiu, J. Vandewege, R. Cronin, A. Borghesani, D. Moodie

引用次数: 4

Abstract

An ultra-low power SiGe BiCMOS IC for driving a 10 channel EAM array at 113 Gb/s is presented for WDM-PON applications. The driver array consumes only 2.2 W or 220 mW per channel, 50% below the state of the art.

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113gb /s (10 × 11.3 Gb/s)超低功耗EAM驱动阵列

提出了一种用于WDM-PON应用的超低功耗SiGe BiCMOS IC，用于驱动速度为113 Gb/s的10通道EAM阵列。驱动器阵列每通道的功耗仅为2.2 W或220 mW，比当前技术水平低50%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2012 38th European Conference and Exhibition on Optical Communications

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