Analytical Modeling of Dielectric Modulated Triple Material Stacked Surrounding Gate Junctionless MOSFET based label free Biosensor

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI:10.1109/EDKCON56221.2022.10032806

Indranil Banerjee, S. Bhattacharyya, A. Sarkar

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Abstract

This article explores and investigates the parametric study of a high-performance 2D Analytical modeling of Dielectric Modulated, Triple Material, Stacked Surrounding Gate Junctionless (DMTMSSGJL) MOSFET based label free biosensor. The biosensing performance parameters namely the surface potential, channel center potential and the threshold voltage has been achieved with the solutions obtained from 2D Poisson’s equation when solved with the aid of cylindrical coordinate system. The dielectric modulation technique has been integrated within the nanogap near the source and drain region to measure the shift in threshold voltage sensitivity for the recognition of various neutral biomolecules such as Biotin, APTES, Gluten, Keratin, and Gelatin. The enhancement in the sensitivity of the model may be achieved by optimizing certain device parameters. These includes oxide thickness (tox), nanogap thickness (tgap), channel length (Lg), nano-gap length (Lgap), alteration of drain voltage (VDS), and work function variation of the metal gate.

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基于无标签MOSFET的介电调制三层材料堆叠周围门无结生物传感器的解析建模

本文探索并研究了基于无标签MOSFET的高性能二维分析建模的介电调制，三重材料，堆叠周围栅无结(DMTMSSGJL)生物传感器的参数化研究。利用二维泊松方程，借助圆柱坐标系求解得到了表面电位、通道中心电位和阈值电压等生物传感性能参数。介电调制技术已集成在源极和漏极附近的纳米间隙中，以测量识别各种中性生物分子(如生物素、APTES、谷蛋白、角蛋白和明胶)的阈值电压灵敏度的变化。模型灵敏度的提高可以通过优化某些器件参数来实现。这些变化包括氧化物厚度(tox)、纳米间隙厚度(tgap)、沟道长度(Lg)、纳米间隙长度(Lgap)、漏极电压(VDS)的变化和金属栅极功函数的变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

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