Ultra-Wideband mm-Wave InP Power Amplifiers in 130 nm InP HBT Technology

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751077

R. Maurer, Seong-Kyun Kim, M. Urteaga, M. Rodwell

引用次数: 6

Abstract

We present power amplifier ICs with a small-signal measured 3dB-bandwidth spanning from 24 GHz to 114 GHz, implemented in a 130 nm InP HBT process. The PAs were designed using sub-quarter wavelength transmission-line baluns for output matching and series power combining. The small signal gain is 15 dB and the DC power consumption is 800 mW in low power operation. The measured output power at 3-dB gain-compression varies between 16.5 dBm and 22dBm between 50 GHz and 100 GHz. The peak PAE is larger than 8 % over the same range. The saturated output power and PAE at 90 GHz are 21.95 dBm and 14.7 % respectively.

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130 nm InP HBT技术的超宽带毫米波InP功率放大器

我们提出了一种功率放大器ic，其小信号测量带宽为3db，范围为24 GHz至114 GHz，采用130 nm InP HBT工艺实现。采用亚四分之一波长传输在线平衡器进行输出匹配和串联功率组合。小信号增益为15 dB，低功率工作时直流功耗为800 mW。在50 GHz和100 GHz范围内，3db增益压缩时的测量输出功率在16.5 dBm和22dBm之间变化。在相同的范围内，PAE的峰值大于8%。90ghz时的饱和输出功率和PAE分别为21.95 dBm和14.7%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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