Printed complementary organic thin film transistors based decoder for ferroelectric memory

Abdelali El Amraoui, M. Bocquet, F. Barros, J. Portal, M. Charbonneau, S. Jacob, J. Bablet, M. Benwadih, V. Fischer, R. Coppard, R. Gwoziecky
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引用次数: 1

Abstract

This paper presents a decoder circuit manufactured in a printed complementary organic TFT technology on flexible substrate. Decoder architecture, simulation and experimental results are detailed. In order to comply with current printed electronic capability, a tree based decoding architecture is specifically implemented in order to provide robust functionality with a limited number of transistors. Two different output stages are implemented in order to drive active and passive ferroelectric memory. To drive active matrix, a buffer output stage is proposed, whereas a pass-gate based output stage, with customizable voltage, is used for passive matrix. Characterization results show that the decoder for both output stage options is functional for a wide range of voltage from 40V down to 5V, and for timing between 5ms and 100ms.
基于印刷互补有机薄膜晶体管的铁电存储器解码器
本文提出了一种在柔性衬底上采用印刷互补有机TFT技术制造的解码器电路。详细介绍了解码器的结构、仿真和实验结果。为了符合当前的印刷电子能力,为了在有限的晶体管数量下提供强大的功能,专门实现了基于树的解码架构。采用两种不同的输出级来驱动有源和无源铁电存储器。为了驱动有源矩阵,提出了一个缓冲输出级,而无源矩阵则采用基于通栅极的可定制电压输出级。表征结果表明,两种输出级选项的解码器都可以在从40V到5V的宽电压范围内工作,并且可以在5ms到100ms之间进行定时。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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