TDC: Tagless DRAM Cache

S. Saranam, M. Mutyam
{"title":"TDC: Tagless DRAM Cache","authors":"S. Saranam, M. Mutyam","doi":"10.1109/ISVLSI.2018.00026","DOIUrl":null,"url":null,"abstract":"Advancements in 3D-stacking technology lead to the usage of stacked DRAM as a last level cache. DRAM caches present multiple design challenges. DRAM cache tag management overhead is one of them because of large area requirement and high access time for look-up. Numerous techniques have been proposed to handle the challenges involved with the DRAM caches. We consider a design choice wherein the tag array storage is removed completely. In this work, we propose a Tagless DRAM Cache (TDC), that completely removes tag array from the DRAM cache and instead, uses the tag-array of the SRAM last level cache (LLC) along with DRAM cache way indices to locate data in the DRAM cache. Experimental evaluation, considering 4-core configuration, shows that TDC achieves a speedup of 9.97% when compared to baseline. Further, TDC shows greater promise by providing reduction in average power consumption by 11.22% and average SRAM LLC miss penalty by 30.8%.","PeriodicalId":114330,"journal":{"name":"2018 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISVLSI.2018.00026","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Advancements in 3D-stacking technology lead to the usage of stacked DRAM as a last level cache. DRAM caches present multiple design challenges. DRAM cache tag management overhead is one of them because of large area requirement and high access time for look-up. Numerous techniques have been proposed to handle the challenges involved with the DRAM caches. We consider a design choice wherein the tag array storage is removed completely. In this work, we propose a Tagless DRAM Cache (TDC), that completely removes tag array from the DRAM cache and instead, uses the tag-array of the SRAM last level cache (LLC) along with DRAM cache way indices to locate data in the DRAM cache. Experimental evaluation, considering 4-core configuration, shows that TDC achieves a speedup of 9.97% when compared to baseline. Further, TDC shows greater promise by providing reduction in average power consumption by 11.22% and average SRAM LLC miss penalty by 30.8%.
3d堆叠技术的进步导致使用堆叠DRAM作为最后一级缓存。DRAM缓存提出了多种设计挑战。DRAM缓存标签的管理开销是其中之一,因为它需要较大的面积和较高的查找访问时间。已经提出了许多技术来处理与DRAM缓存有关的挑战。我们考虑一种设计选择,其中标签阵列存储被完全删除。在这项工作中,我们提出了一种无标签DRAM缓存(TDC),它完全从DRAM缓存中删除标签阵列,而是使用SRAM最后一级缓存(LLC)的标签阵列以及DRAM缓存方式索引来定位DRAM缓存中的数据。考虑到4核配置,实验评估表明,与基线相比,TDC实现了9.97%的加速提升。此外,TDC显示出更大的前景,平均功耗降低11.22%,平均SRAM LLC缺失率降低30.8%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信