Si-Ge-Sn heterostructures: Growth and applications

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874691

D. Buca, S. Wirths, D. Stange, A. Tiedemann, G. Mussler, Z. Ikonić, S. Chiussi, J. Hartmann, D. Grutzmacher, S. Mantl

引用次数: 1

Abstract

This study presents the synthesis of a SiGeSn buffer layer by reduced pressure CVD method. Band structure calculation and transmission electron microscopy are used for material characterization. The use of this heterostructure for MOSFET and MOS capacitor fabrication is also addressed.

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Si-Ge-Sn异质结构:生长与应用

本研究采用减压CVD法合成SiGeSn缓冲层。利用能带结构计算和透射电镜对材料进行表征。本文还讨论了这种异质结构在MOSFET和MOS电容器制造中的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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