A High-intensity Nano-aperture Vertical-Cavity Surface-Emitting Laser With Controlled Polarization

2006 64th Device Research Conference Pub Date : 2006-06-26 DOI:10.1109/DRC.2006.305150

Zhilong Rao, J. Matteo, L. Hesselink, J. Harris

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引用次数: 1

Abstract

near-field optical data storage. Also, data transfer rates canbegreatly increased iftheVCSELsareapplied inparallel arrays[11. Previous workonnanoaperture VCSELsutilize conventional circular apertures whichsuffer fromlowpoweroutput through thenanoaperture whentheaperture size becomes muchsmaller thanonewavelength[23]. We propose toapply aunique C-shaped nano-aperture (C-aperture) ontoVCSELs.Fromsimulation, theC-aperture showsthree orders of magnitude higher powertransmission efficiency thanaconventional square orcircular aperture producing thesame near-field spotsize[41. We report herearecord-high near-field intensity of15.4mW/[tm2 achieved fromournanoaperture VCSELwitha70nmC-aperture. Ourtop-emitting VCSELsaredesigned tooperate around 970nmandconsist of9.5pairs ofp-type distributed Bragg reflectors (DBR),three strain-compensated InGaAs/GaAsP quantumwellsand38.5pairs ofn-DBRs.The reflectivity ofthetopmirror isenhanced witha150nmthick Aucoating. We insert ahalf-wavelength thick SiO2 filmbetween theAucoating andthetopDBR pairs toenhance thetransmission through thenano-aperture. We use wetoxidation ofAlGaAstoobtain a2.8pim-diameter oxide aperture forcurrent andmodeconfinement. Thenanoapertures areetched through theAucoating using aFocused IonBeam(FIB). Thetransmission oflight through theC-aperture ispolarization-dependent. Forthematched polarization, theCaperture produces awell-confined near-field spotwithhighintensity. However, fortheorthogonal mismatched polarization, theresulted near-field spotispoorly confined andtheintensity istwoorders ofmagnitude lower. Since VCSELsnormally havetwodegenerate orthogonal polarization states, weneedtocontrol thepolarization ofthe VCSELsinorder toapply theC-aperture ontheVCSELs.We openfour50*1500nm slits surrounding a70nmCaperture intheAu coating using FIBtocontrol thepolarization. Sincethetransmission oflight polarized perpendicular totheslit ismuchhigher thanthatoflight polarized parallel totheslit, thepolarization ofthe VCSELsiseffectively controlled tobeparallel totheslit duetolower loss inthis direction. Toidentify howmuchnetpowercomesoutoftheC-aperture, weblock thelight transmitted through theslits by depositing 150nmthick Pttofill theslits using electron-beam assisted chemical vapordeposition onaFIB/SEM dual-beam system. Pthasreflectivity of73%at1ptm, compared withreflectivity of95%forAu.Sothepolarization selectivity bytheslits ismaintained after theslits arefilled withPt.We measured thepolarization-resolved power

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可控偏振的高强度纳米孔径垂直腔面发射激光器

近场光数据存储。此外，如果在并行阵列中应用vcsel，数据传输速率可以大大提高[11]。以前的纳米孔径vc17采用传统的圆形孔径，当孔径尺寸远小于一个波长时，其输出功率较低[23]。我们提出了一种独特的c形纳米孔径(c -孔径)应用于vcsel。仿真结果表明，c孔径在产生相同近场光斑尺寸的情况下，其传输效率比传统的方形或圆形孔径高3个数量级[41]。我们在此报告了创纪录的高近场强度15.4 mw /[tm2的纳米孔径vcsel0 - 70nm孔径。顶发射vcsels设计工作在970nm左右，由9.5对p型分布式布拉格反射器(DBR)、3个应变补偿InGaAs/GaAsP量子阱和38.5对n-DBR组成。顶镜的反射率增加了150nm厚的涂层。我们在顶层dbr对和底层dbr对之间插入了一层半波长厚的SiO2薄膜，以增强通过纳米孔径的传输能力。我们使用氧化铝氧化得到直径为2.8pim的氧化孔来进行电流和模态的定义。然后使用聚焦离子束(FIB)通过谐振腔蚀刻孔径。通过c孔径的透射光是偏振相关的。为了匹配偏振，该孔径产生了高强度的约束良好的近场光斑。然而，对于正交失配偏振，导致近场点分布不均，强度降低了几个数量级。由于vcsel通常具有两个退化的正交偏振态，因此为了在vcsel上应用c -孔径，我们需要控制vcsel的偏振。我们在au涂层的70nm孔径周围开了四个50*1500nm的狭缝来控制极化。由于垂直于狭缝的偏振光透射比平行于狭缝的偏振光透射高得多，因此有效地控制了垂直于狭缝的偏振，从而降低了该方向上的损耗。为了确定c -孔径输出的净功率，在afib /SEM双光束系统上使用电子束辅助化学气相沉积技术沉积150nm厚的ptofill狭缝，从而锁定通过狭缝传输的光。1ptm的反射率为73%，而au的反射率为95%。在用pt填充狭缝后，狭缝的偏振选择性保持不变。我们测量了偏振分辨能力

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2006 64th Device Research Conference

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