VHF Monolithic Crystal Filters Fabricated by Chemical Milling

R. Smythe, M. D. Howard, J. R. Hunt
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引用次数: 5

Abstract

The fundamental frequency limitations imposed by conventional quartz wafer machining can be overcome by chemical milling. Using this process, two-pole, fundamental mode AT-cut monolithic filters have been fabricated at frequencies from 70 to 250 MHz. Four and six-pole tandem monolithic filters have also been constructed. Chemical milling allows the realization in an inductorless tructure of filter bandwidths previously unattainable at VHF. Capabilities and limitations are discussed. Introduction The introduction of dual-mode resonators in the '60's greatly advanced the VHF crystal filter art by simplifications resulting from the reduced number of components as compared with discreteresonator filters. Most importantly, it afforded improvements by eliminating the need for balanced transformers, which increase in difficulty with increasing frequency. Further restrictions remain, however, associated with the maximum fundamental frequency obtainable using conventional wafer lapping and polishing techniques. Since, at a given frequency and bandwidth, filter impedance is proportional to the third power of the overtone, increasing the realizable fundamental frequency greatly extends the capabilities of crystal filters. Vig, et a1 [ l , 21 developed the use of chemical etching for polishing quartz, and suggested that etching might be used to fabricate resonators having the ring-supported wafer structure proposed by Guttwein, Ballato, and Lukaszek [3] and others. The development of such chemically etched, or milled, VHF and UHF ring-supported resonators has been carried out in our organization [ 4 ] . The same process techniques have also been applied to the fabrication of monolithic two-pole filters at fundamental frequencies up to 250 MHz. Four and six-pole tandem monolithic filters have also been produced. This paper describes some of the filters which have been developed and discusses the capabilities and limitations of this approach. Two-Pole Fabrication Figure 1 shows the ringsupported wafer structure of a chemically milled two-pole monolithic filter. Aluminum electrodes were deposited using photofabricated aperture masks and electron-beam-gun evaporation. The electrode configuration shown is similar to that used by us for conventional VHF two-poles. An alternative arrangement, discussed below, was also employed. The two-pole devices were packaged in standard 3-lead holders dimensionally equivalent to type HC-l8/U except for a reduced height of 0.450 inch (11.4 mm). FIG. 1. RING-SUPPORTED MONOLITHIC FILTER WAFER As frequency and bandwidth increase, required electrode dimensions decrease. The use of conventional aperture masks to define electrode patterns is limited by aperture dimensional tolerances and by front-to--back mask registration errors. To alleviate the former to some degree and to essentially eliminate the effect of mis-registration, the novel electrode configuration shown in figure 2 was devised and used to fabricate the 252 MHz two-pole devices shown in the next section, A s can be seen, the lectrode dimensions for each resonator are independent of lateral mis-registration. The effects of electrode connecting tabs in these configurations can be approximated analytically and have been taken account of in design. Qualitative effects of tabs have been discussed previously [ 5 ] . L fiRa . . . . . . . 5 MILS (130p) FIG. 2. NOVEL ELECTRODE CONFIGURATION USED FOR 252 MHz TWO-POLE FILTER Results Table 1 summarizes the primary characteristics of seven representative filters. All seven use fundamental mode, AT-cut two-poles. Figures 3-12 show attenuation and delay responses. The responses are characterized by low insertion loss, reasonable unwanted mode response, and high ultimate attenuation. Natural impedances run from 470 to 1400 ohms.
化学研磨制备甚高频单晶滤波器
传统石英晶圆加工的基频限制可以通过化学铣削来克服。利用该工艺,在70至250 MHz的频率范围内制造了两极基模at -cut单片滤波器。四极和六极串联单片滤波器也已构建。化学研磨允许在无电感器结构中实现以前在甚高频无法实现的滤波器带宽。讨论了功能和限制。60年代引入的双模谐振器与离散谐振器滤波器相比,通过减少元件数量的简化,大大推进了VHF晶体滤波器艺术。最重要的是,它通过消除对平衡变压器的需求来提供改进,平衡变压器的难度随着频率的增加而增加。然而,进一步的限制仍然存在,与使用传统晶圆研磨和抛光技术可获得的最大基频有关。因为,在给定的频率和带宽下,滤波器阻抗与泛音的三次幂成正比,增加可实现的基频大大扩展了晶体滤波器的能力。Vig等[1,21]开发了化学蚀刻抛光石英的方法,并建议使用蚀刻技术制造具有Guttwein、Ballato和Lukaszek[3]等人提出的环形支撑晶圆结构的谐振器。这种化学蚀刻或研磨,VHF和UHF环支撑谐振器的开发已经在我们的组织中进行了[4]。同样的工艺技术也被应用于基频高达250 MHz的单片两极滤波器的制造。四极和六极串联单片滤波器也已生产。本文介绍了一些已经开发的滤波器,并讨论了这种方法的能力和局限性。图1显示了化学研磨双极单片滤波器的环形支撑晶圆结构。采用光刻孔径掩模和电子束枪蒸发法制备铝电极。所示的电极结构与我们使用的传统甚高频两极相似。还采用了下面讨论的另一种安排。两极器件封装在标准的3引线支架中,尺寸相当于hc - 18 /U型,只是高度降低了0.450英寸(11.4毫米)。图1所示。随着频率和带宽的增加,所需的电极尺寸减小。使用传统的孔径掩模来定义电极图案受到孔径尺寸公差和前后掩模配准误差的限制。为了在一定程度上缓解前者并从根本上消除错配的影响,设计了如图2所示的新型电极配置,并用于制造下一节所示的252 MHz两极器件,可以看到,每个谐振器的电极尺寸与横向错配无关。在这些结构中,电极连接片的影响可以近似地分析,并已在设计中加以考虑。之前已经讨论过标签的定性影响[5]。L fiRa . . . . . . .5 mls (130p)用于252mhz两极滤波器的新型电极配置结果表1总结了七个代表性滤波器的主要特性。所有七个使用基本模式,at切割两极。衰减和延迟响应如图3-12所示。该响应具有低插入损耗、合理的非期望模态响应和高极限衰减等特点。自然阻抗从470欧姆到1400欧姆。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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