Root Cause Analysis on Analog Circuit Using TR-LADA

Lua Winson, P. Angeline, G. Ranganathan, A. Girish, Ravikumar Venkat Krishnan
{"title":"Root Cause Analysis on Analog Circuit Using TR-LADA","authors":"Lua Winson, P. Angeline, G. Ranganathan, A. Girish, Ravikumar Venkat Krishnan","doi":"10.1109/IPFA47161.2019.8984900","DOIUrl":null,"url":null,"abstract":"Analog circuits are traditionally harder to debug using light assisted device alteration (LADA) also known as dynamic laser stimulation (DLS), as the circuitry are too sensitive to carrier generations. This paper showcases a successful post-silicon debug on analog circuitries (start-up circuit) using nanosecond pulse-on-demand laser to perform DLS leading into root cause identification on a marginality issue in a sub-20nm FinFET technology device.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA47161.2019.8984900","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Analog circuits are traditionally harder to debug using light assisted device alteration (LADA) also known as dynamic laser stimulation (DLS), as the circuitry are too sensitive to carrier generations. This paper showcases a successful post-silicon debug on analog circuitries (start-up circuit) using nanosecond pulse-on-demand laser to perform DLS leading into root cause identification on a marginality issue in a sub-20nm FinFET technology device.
基于TR-LADA的模拟电路根本原因分析
传统上,使用光辅助设备改变(LADA)(也称为动态激光刺激(DLS))来调试模拟电路比较困难,因为电路对载波世代太敏感。本文展示了在模拟电路(启动电路)上成功的后硅调试,使用纳秒脉冲按需激光对低于20nm FinFET技术器件的边缘问题执行DLS,从而找到根本原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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