A versatile finite volume simulator for the analysis of electronic properties of nanostructures

Abstract

We present a novel semantic approach to modeling and simulation of nanoelectronic devices. The approach is based on a finite volume spatial discretization scheme. The scheme was adapted to accurately treat material anisotropy. It is thus capable of capturing orientation and strain effects both of which are prominent in the nanoscale regime. We also demonstrate the method's simplicity and power with a three-dimensional simulation study of a quantum dot using a six band k · p Hamiltonian for holes as model.