Heteroepitaxial Growth and Power Devices Using AlGaN/GaN HEMT on 200 mm Si (111) Substrate

Abstract

Developments of heteroepitaxial growth and characteristics of MOCVD-grown AlGaN/GaN HEMTs on Si substrates are presented. High-temperature-grown AlGaN/AlN intermediate layers and GaN/AlN strained layer superlattice are effective in improving the crystal quality of a following GaN layer and in growing thick device structure on Si. The AlGaN/GaN HEMT has been successfully grown on 8-inch Si, which indicates that the gas phase reaction is minimized in this growth. The device exhibited the excellent uniformity, the 2DEG properties and the device characteristics.