Effects of Collected Charge and Drain Area on SE Response of SRAMs at the 5-nm FinFET Node

Abstract

Single-port (SP) and two-port (TP) SRAM exposure to low-energy protons, alpha particles, and heavy-ions with varying supply voltages show particle linear energy transfer (LET) values and circuit design strongly influence charge collection, and subsequently SE cross-sections. Critical charge is not the dominant determinant of SE cross-section at the 5-nm node for all environments.