TEMPERATURE INFLUENCE ON THE MAGNETIC SENSITIVE TRANSISTOR STRUCTURES PARAMETERS

Abstract

. Studies have shown that semiconductor magnetically sensitive transistor structures (MTS) can be the basis of effective magnetic field sensors, as well as sensors of the other physical quantities. However, such sensors practical application requires investigation of the destabilizing factors influence on the MTS themselves to ensure high metrological characteristics. Temperature is among these main factors. The study of the environment temperature influence on the main MTS characteristics is the subject of this work. The mechanisms of the temperature influence on the MTS, their characteristics dependences, in particular, the conversion parameters from the point of view of possible use in sensors, are analyzed. problems study in order to optain stronger knowledge of the temperature effect on the MTS characteristics. The experimental and theoretical temperature dependences of the drift MTS (DMTS) current transmission coefficients in the magnetic field, the coordinate of the maximum mangitosensitivity site dependence on temperature, and the dependence of the DMTS mangitosensitivity on temperature for different materials are given. The mechanisms of the temperature influence on the MTS, their characteristics dependences, in particular, the conversion parameters from the point of view of possible use in sensors, are analyzed.