A new surface potential-based compact model for a-IGZO TFTs in RFID applications

Z. Zong, Ling Li, Jin Jang, Zhigang Li, Nianduan Lu, Liwei Shang, Z. Ji, Ming Liu
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引用次数: 15

Abstract

For the first time, we present a surface potential-based compact model for a-IGZO TFTs based on multiple trapping-release theory and benchmark our work against device measurements. This model does not require time-consuming calculation. Meanwhile, we have developed the automatic parameter extraction program, which can extract the parameters rapidly and accurately. Moreover, the compact model is coded in Verilog-A, and implemented in a vendor CAD environment. This model provides physics-based consistent description of DC and AC device characteristics and enables accurate circuit-level performance prediction and RFID circuit design of a-IGZO TFTs.
一种新的基于表面电位的A - igzo TFTs在RFID应用中的紧凑模型
我们首次提出了基于多次捕获-释放理论的基于表面电位的a- igzo TFTs紧凑模型,并根据器件测量对我们的工作进行了基准测试。这个模型不需要耗时的计算。同时,我们开发了自动参数提取程序,可以快速准确地提取出参数。此外,紧凑的模型在Verilog-A中编码,并在供应商CAD环境中实现。该模型提供了基于物理的直流和交流器件特性的一致描述,并实现了精确的电路级性能预测和a-IGZO TFTs的RFID电路设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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