Inorganic-organic hybrid resistive switching memory with high uniformity and multilevel operation

Abstract

Poor uniformity of switching parameters has become a main obstacle hindering the real application of single-polymer organic RRAM devices. In this paper, target to solve this issue, an HfOx/parylene hybrid RRAM device has been proposed and experimentally investigated. Measurement data reveals that the switching parameters uniformity of hybrid devices is dramatically improved compared to pure parylene RRAM devices. In addition, hybrid devices show the capability of low-voltage operation (Vset~-2V, Vreset~0.6V) and high on/off current ratio (>1000). Due to the high uniformity and large on/off ratio, the multilevel storage ability with good retention of this hybrid device was experimentally demonstrated.