Use of Energy Filtered TEM to Observe Gate Oxide Breakdown Defects

Abstract

In this paper we demonstrate the analytical method using energy-filtered TEM (EFTEM) in gate oxide breakdown defect analysis for semiconductor devices. We discuss the limitation of normal high-resolution TEM (HRTEM) imaging on gate oxide breakdown defect characterization and how EFTEM help on the contrast enhancement. We discuss three case studies utilizing EFTEM for the defect characterization. In each case study, EFTEM is used to observe gate oxide breakdown defect for both NMOS and PMOS failure for relatively thicker TEM samples to give more accurate analysis of the gate oxide breakdown mechanisms for the root-cause understanding.