Oscillation neuron based on threshold switching characteristics of niobium oxide films

Abstract

Here we report threshold switching characteristics in niobium oxide films, which is in turn used to build an oscillation neuron. In particular, we show that strong correlation exists between the oxygen flow ratio during NbOx film deposition and the electrical properties of NbOx devices. The NbOx devices can show metallic, volatile threshold switching, and non-volatile resistive switching characteristics, depending on the oxygen flow ratio. The NbOx device with threshold switching can be used to form an oscillation neuron displaying three critical features: all-or-nothing oscillation, threshold-driven oscillation and input-modulated frequency response, which could be promising for applications as artificial neurons in hardware neural networks.