{"title":"Proton cross-sections from heavy-ion data in GaAs devices","authors":"D. L. Hansen","doi":"10.1109/NSREC.2017.8115468","DOIUrl":null,"url":null,"abstract":"This paper reports on the calculation of proton SEU cross section from heavy-ion data in GaAs devices. A number of different models are used, however in each, accommodations must be made to account for the fact that the density and ionization energy of GaAs differs from that of Si. Model accuracy is checked using data on proton and heavy-ion cross sections from the published literature.","PeriodicalId":284506,"journal":{"name":"2017 IEEE Radiation Effects Data Workshop (REDW)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radiation Effects Data Workshop (REDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSREC.2017.8115468","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper reports on the calculation of proton SEU cross section from heavy-ion data in GaAs devices. A number of different models are used, however in each, accommodations must be made to account for the fact that the density and ionization energy of GaAs differs from that of Si. Model accuracy is checked using data on proton and heavy-ion cross sections from the published literature.