New MOVPE process for InP based HBT's using CBr/sub 4/, TBA and TBP in N/sub 2/ ambient

Abstract

Carbon doped InGaAs/InP was grown utilising TBA, CBr/sub 4/ in N/sub 2/. The n-doping uniformity for InGaAs shows a standard deviation of less than 1%, utilising SiH/sub 4/. Maximum carbon doping levels of 10/sup 20/ cm/sup -3/ were achieved, comparable to MBE techniques. HBTs with 6.5/spl times/10/sup 18/ cm/sup 3/ doped base layers, grown at 550/spl deg/C, show current amplifications of 130.