Single-chip NMOS AGC amplifiers for Gb/s lightwave systems

1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1987.1157135

R. Jindal, E. Hofstatter, O. Mizuhara

引用次数: 6

Abstract

A cascade of 8 gain-controlled stages providing a maximum gain of 50dB and a 70dB dynamic range will be reported A 900MHz bandwidth has been attained in an NMOS chip employing 0.75μm gate lengths, with a power dissipation of 250mW.

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用于Gb/s光波系统的单片NMOS AGC放大器

8级增益控制级级，最大增益为50dB，动态范围为70dB。采用0.75μm栅极长度的NMOS芯片实现了900MHz带宽，功耗为250mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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