Suppression of self-heating effect employing bulk vertical-channel bipolar junction transistor (BJT) type capacitorless 1T-DRAM cell

Abstract

Excellent thermal characteristics of the bulk vertical-channel bipor junction transistor (BJT) type 1T-DRAM compared to the SOI planar type with 20nm generation. The bulk vertical type can operate with the low increase of lattice temperature (ΔT_L^max) of 26K and high enough read current margin of 1.8μA/cell, while the SOI planar type shows large ΔT_L^max value of 58K.