Channel Noise Current in Deep Sub-Micron MOSFETs

Abstract

An extraction method to obtain the channel noise current in deep-submicron MOSFETs directly from DC, scattering parameter and RF noise measurements is presented. Extracted channel thermal noise from long channel devices is consistent with the long channel theory (id 2/∆f = γ 4kTgdo with γ =2/3 in saturation). The value of γ can increase up to 1.3 for a 0.18μm device. Extracted channel thermal noise as a function of bias for five different channel lengths is also presented.