{"title":"Enhanced exciton-phonon efficiency in photoluminescence of SrTiO3 :Er films covered on ZnO nanorods","authors":"Shean-Yih Lee, Shich-Chuan Wu, P. Yang","doi":"10.1109/ISNE.2010.5669167","DOIUrl":null,"url":null,"abstract":"Characteristics of light emission of Er-doped SrTiO3 (STO) thin films (STO : Er) deposited on different surface morphologies by a sputtering technique were investigated. The luminescence efficiency of Er-doped STO films covered on ZnO nanorods was greater than deposited directly on Si (100) substrates in all specimens. Formation of one-dimensional well-aligned ZnO nanorods has been achieved using a simple aqueous solution method at low temperatures. The dependence of luminescence efficiency on Er3+ concentrations and annealing temperatures in the Er-doped STO films is governed by crystallinity and ion-ion interaction. The photoluminescence (PL) measurement of the Er-doped STO films covered on ZnO nanorods show that the much stronger intensity of green light is observed at annealing temperature 700 °C and 3 mol% Er3+ -doped concentration. The presence of clusters as the Er concentration exceed 3 mol% will diminish the emission intensity. Besides, concentration quenching was observed on STO films containing 5 mol% Er dopant. The phenomenon was attributed to energy transference and cross relaxation between closely sited Er3+ ions in the STO lattice. We also showed that the quenching mechanism of the luminescent intensity is evidently relational with Er-doped concentrations and annealing temperatures. The photoluminescence properties suggest that adding a 3 mol% Er-doped STO films covered on ZnO nanorods is the optimal choice for optoelectronic device applications.","PeriodicalId":412093,"journal":{"name":"2010 International Symposium on Next Generation Electronics","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Symposium on Next Generation Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2010.5669167","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Characteristics of light emission of Er-doped SrTiO3 (STO) thin films (STO : Er) deposited on different surface morphologies by a sputtering technique were investigated. The luminescence efficiency of Er-doped STO films covered on ZnO nanorods was greater than deposited directly on Si (100) substrates in all specimens. Formation of one-dimensional well-aligned ZnO nanorods has been achieved using a simple aqueous solution method at low temperatures. The dependence of luminescence efficiency on Er3+ concentrations and annealing temperatures in the Er-doped STO films is governed by crystallinity and ion-ion interaction. The photoluminescence (PL) measurement of the Er-doped STO films covered on ZnO nanorods show that the much stronger intensity of green light is observed at annealing temperature 700 °C and 3 mol% Er3+ -doped concentration. The presence of clusters as the Er concentration exceed 3 mol% will diminish the emission intensity. Besides, concentration quenching was observed on STO films containing 5 mol% Er dopant. The phenomenon was attributed to energy transference and cross relaxation between closely sited Er3+ ions in the STO lattice. We also showed that the quenching mechanism of the luminescent intensity is evidently relational with Er-doped concentrations and annealing temperatures. The photoluminescence properties suggest that adding a 3 mol% Er-doped STO films covered on ZnO nanorods is the optimal choice for optoelectronic device applications.