400 GHz FMAX InP/GaAsSb HBT for millimeter-wave applications

Abstract

This paper presents multi-finger InP/GaAsSb/InP HBTs designed for millimeter-wave applications. The 0.7×10 µm² emitter size 4- and 8- finger devices demonstrated fT and fmax above 200 GHz and 400 GHz respectively, a current gain of 28 and an emitter breakdown voltage of 7V. We also report on the performances of a 2-stage power amplifier based on more conservative devices (1×15 µm² two-emitter finger). This circuit delivers an output power above 15 dBm at 60 GHz.