High mobility transparent Al-Sn-Zn-O thin film transistors fabricated at low temperature

Abstract

Fully-transparent inverted-staggered Aluminum and Tin co-doped ZnO (ATZO) thin film transistors (TFTs) have been fabricated by RF magnetron sputtering on glass substrate at low temperature. The characteristics of ATZO TFTs fabricated at various partial pressures of oxygen are studied. The ATZO TFTs demonstrate excellent performance, including a high field effect mobility of 145.33 cm2/Vs, a threshold voltage of 1.71 V, a subthreshold swing of 0.22 V/dec and an on-to-off current ratio of 7.5×107.