Magneto-electric magnetic tunnel junction based analog circuit options

Abstract

The magneto-electric magnetic tunnel junction (ME-MTJ) is a voltage controlled beyond CMOS device based on the principle of ME anti-ferromagnetic (AFM) exchange biasing of chromia (Cr2O3) and the tunneling magnetoresistance (TMR) of a magnetic tunnel junction (fixed/free ferromagnet (FM) stack). These devices have previously been demonstrated for the implementation of digital logic and memory applications. We here demonstrate their analog capabilities with a variety of analog functions adapted specifically to the characteristics of ME-MTJ — based devices. The novel circuit options proposed in this paper includes a ME-MTJ based analog comparator and the two variations of an 8-level analog-to-digital converter (ADC) using serial and parallel ME-MTJ circuit configurations.