A Novel Active Inductor with High Q Factor and Inductance and Mutually Independent Tuning Characteristic

Yan Liang, Wanrong Zhang, Hongyun Xie, D. Jin, W. Na, Yamei Xu, Ziteng Cai
{"title":"A Novel Active Inductor with High Q Factor and Inductance and Mutually Independent Tuning Characteristic","authors":"Yan Liang, Wanrong Zhang, Hongyun Xie, D. Jin, W. Na, Yamei Xu, Ziteng Cai","doi":"10.1109/asid52932.2021.9651673","DOIUrl":null,"url":null,"abstract":"In this paper, a novel Active Inductor (AI) with high quality factor Q, high inductance L and mutually independent tuning characteristic is presented. It is mainly composed of three circuit blocks, and each circuit block is configured with an external voltage tunable terminal respectively. The high Q factor is achieved through the multiple MOSTETs negative resistance generation network connected between the positive and negative transconductors. Meanwhile, the high inductance is realized by the MOSFET variable capacitance block and the negative transconductor of the gyrator-C network in parallel. Additionally, the mutually independent tuning of Q and L each other is accomplished by coordinately varying three external tunable terminal voltages in three circuit blocks. Based on TSMC 0.18μm CMOS process, the novel AI is verified by Advanced Design System (ADS). The results show that at 4.8GHz, the peak Q factor can reach high up to 4086.06, and the inductance is as high as 273.62nH; at 4.5GHz, 4.8GHz and 5.1GHz, the Q value can be tuned greatly from 341.90 to 433.80, from 800.11 to 4086.06 and from 210.23 to 305.71 respectively, whereas the variation of L value is only 0.59%, 0.66% and 0.73%; Furthermore, under 4GHz, 4.8GHz and 5.4GHz, the L value can be tuned noticeably from 220.95nH to 247.72nH, from 298.00nH to 344.90nH and from 418.88nH to 511.34nH respectively, while the variation of the Q value is only 0.54%, 0.65% and 0.83%.","PeriodicalId":150884,"journal":{"name":"2021 IEEE 15th International Conference on Anti-counterfeiting, Security, and Identification (ASID)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 15th International Conference on Anti-counterfeiting, Security, and Identification (ASID)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/asid52932.2021.9651673","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper, a novel Active Inductor (AI) with high quality factor Q, high inductance L and mutually independent tuning characteristic is presented. It is mainly composed of three circuit blocks, and each circuit block is configured with an external voltage tunable terminal respectively. The high Q factor is achieved through the multiple MOSTETs negative resistance generation network connected between the positive and negative transconductors. Meanwhile, the high inductance is realized by the MOSFET variable capacitance block and the negative transconductor of the gyrator-C network in parallel. Additionally, the mutually independent tuning of Q and L each other is accomplished by coordinately varying three external tunable terminal voltages in three circuit blocks. Based on TSMC 0.18μm CMOS process, the novel AI is verified by Advanced Design System (ADS). The results show that at 4.8GHz, the peak Q factor can reach high up to 4086.06, and the inductance is as high as 273.62nH; at 4.5GHz, 4.8GHz and 5.1GHz, the Q value can be tuned greatly from 341.90 to 433.80, from 800.11 to 4086.06 and from 210.23 to 305.71 respectively, whereas the variation of L value is only 0.59%, 0.66% and 0.73%; Furthermore, under 4GHz, 4.8GHz and 5.4GHz, the L value can be tuned noticeably from 220.95nH to 247.72nH, from 298.00nH to 344.90nH and from 418.88nH to 511.34nH respectively, while the variation of the Q value is only 0.54%, 0.65% and 0.83%.
一种具有高Q因数、高电感和相互独立调谐特性的新型有源电感
提出了一种具有高品质因数Q、高电感L和相互独立调谐特性的新型有源电感。它主要由三个电路块组成,每个电路块分别配置一个外部电压可调端子。高Q因子是通过多个mostet负电阻产生网络连接在正、负导体之间实现的。同时,高电感是由MOSFET变电容块和负变换器的陀螺- c网络并联实现的。另外,Q和L相互独立的调谐是通过在三个电路块中协调改变三个外部可调谐端子电压来实现的。基于台积电0.18μm CMOS工艺,采用先进设计系统(ADS)进行了验证。结果表明:在4.8GHz时,峰值Q因子高达4086.06,电感高达273.62nH;在4.5GHz、4.8GHz和5.1GHz频段,Q值分别在341.90 ~ 433.80、800.11 ~ 4086.06和210.23 ~ 305.71之间有较大的可调性,而L值的变化仅为0.59%、0.66%和0.73%;在4GHz、4.8GHz和5.4GHz下,L值分别从220.95nH到247.72nH、从298.00nH到344.90nH和从418.88nH到511.34nH可以明显调谐,而Q值的变化仅为0.54%、0.65%和0.83%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信