M. Huang, S. W. Chang, M. Chen, C. Fan, H. T. Lin, C. H. Lin, R. Chu, K. Y. Lee, M. A. Khaderbad, Z. Chen, C. H. Chen, L. T. Lin, H. Lin, H. Chang, C. Yang, Y. Leung, Y. Yeo, S. Jang, H. Hwang, Carlos H. Díaz
{"title":"In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate","authors":"M. Huang, S. W. Chang, M. Chen, C. Fan, H. T. Lin, C. H. Lin, R. Chu, K. Y. Lee, M. A. Khaderbad, Z. Chen, C. H. Chen, L. T. Lin, H. Lin, H. Chang, C. Yang, Y. Leung, Y. Yeo, S. Jang, H. Hwang, Carlos H. Díaz","doi":"10.1109/VLSIT.2015.7223675","DOIUrl":null,"url":null,"abstract":"In<sub>0.53</sub>Ga<sub>0.47</sub>As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In<sub>0.53</sub>Ga<sub>0.47</sub>As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS~95 mV/dec., I<sub>on</sub>/I<sub>off</sub> ~10<sup>5</sup>, DIBL ~51 mV/V at V<sub>ds</sub> = 0.5V for L<sub>g</sub>=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high field effect mobility (μ<sub>EF</sub> = 1837 cm<sup>2</sup>/V-s with EOT ~ 0.9 nm) is among the highest values reported for surface channel In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs.","PeriodicalId":181654,"journal":{"name":"2015 Symposium on VLSI Technology (VLSI Technology)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Symposium on VLSI Technology (VLSI Technology)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2015.7223675","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 33
Abstract
In0.53Ga0.47As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In0.53Ga0.47As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS~95 mV/dec., Ion/Ioff ~105, DIBL ~51 mV/V at Vds = 0.5V for Lg=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high field effect mobility (μEF = 1837 cm2/V-s with EOT ~ 0.9 nm) is among the highest values reported for surface channel In0.53Ga0.47As MOSFETs.
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