Back-gate effects and detailed characterization of junctionless transistor

Abstract

The work addresses effect of inter-gate coupling on back-channel characteristics of planar accumulation-mode junctionless (JL) MOSFETs, fabricated with advanced FDSOI technology. A systematic methodology to extract and discriminate the contributions of bulk and accumulation-mode mobility has been developed. Front-gate voltage strongly controls the properties of back channel in ultra-thin heavily doped JL devices. It has been demonstrated that both volume and accumulation-mode mobilities increase when the front surface is in accumulation.