A 10V complementary SiGe BiCMOS foundry process for high-speed and high-voltage analog applications

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 2007-10-22 DOI:10.1109/BIPOL.2007.4351834

T. Tominari, M. Miura, H. Shimamoto, M. Arai, Y. Yoshida, H. Sato, T. Aoki, H. Nonami, S. Wada, H. Hosoe, K. Washio, T. Hashimoto

引用次数: 4

Abstract

A manufacturable 10V-BVcc/15GHz-fr complementary SiGe BiCMOS foundry process was developed for high-performance multi-media applications. A novel SiGe profile with a forward/backward stepped Ge profile and controllable emitter interface layer improved the SiGe PNP's FOM to 620 GHz ldrV.

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用于高速和高压模拟应用的10V互补SiGe BiCMOS铸造工艺

针对高性能多媒体应用，开发了一种可制造的10V-BVcc/15GHz-fr互补SiGe BiCMOS铸造工艺。一种具有前/后阶Ge轮廓和可控发射极界面层的新型SiGe轮廓将SiGe PNP的FOM提高到620 GHz ldrV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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