Simple Formulae for the Effective Plus-Factor for Transient Enhanced Diffusion

Abstract

Simple analytical expressions for the effective plus-factor for transient enhanced diffusion after non-amorphizing implantations in silicon are presented. The formulae describe the ion mass, implant energy, and dose dependence of the numerically calculated plus-factor with a root mean square error of 3%. The accuracy of the numerical data as well as possible errors from a depth dependence of the plus-factor are dis-