A CMOS High Resolution Multi-Edge Delay Generator

S. Harb, W. Eisenstadt
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引用次数: 3

Abstract

This paper describes a new architecture of a high-resolution multi-edge delay generator for on-chip testing applications, which enables a timing generation with a sub-gate delay resolution to be fully implemented in any purely digital CMOS process. The proposed delay generator utilizes multi edge-triggered oscillators to achieve a high resolution based on the Vernier technique with low power, a smaller footprint and without requiring a high speed clock reference compared to the conventional delay generators. In addition, the maximum measured delay range of the proposed design can be improved without degrading the achievabl5ve resolution. Simulation results based on 0.09 μm CMOS technology shows an achievable delay resolution of 14.6 ps with a reference input frequency at 500 MHz.
CMOS高分辨率多边延迟发生器
本文描述了一种用于片上测试应用的高分辨率多边缘延迟发生器的新架构,它使具有子门延迟分辨率的时序生成能够在任何纯数字CMOS工艺中完全实现。所提出的延迟发生器利用多边触发振荡器实现基于游标技术的高分辨率,与传统的延迟发生器相比,功耗低,占地面积小,不需要高速时钟参考。此外,该设计的最大测量延迟范围可以在不降低可实现分辨率的情况下得到改善。仿真结果表明,当参考输入频率为500 MHz时,基于0.09 μm CMOS技术的延迟分辨率可达14.6 ps。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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