Radiation induced leakage currents in dense and porous low-k dielectrics

R. J. Waskiewicz, Michael J. Mutch, P. Lenahan, S. King
{"title":"Radiation induced leakage currents in dense and porous low-k dielectrics","authors":"R. J. Waskiewicz, Michael J. Mutch, P. Lenahan, S. King","doi":"10.1109/IIRW.2016.7904912","DOIUrl":null,"url":null,"abstract":"We investigate leakage currents in a-SiOC:H thin films with electrically detected magnetic resonance (EDMR) and new zero field magnetoresistance measurements. We substantially change leakage currents by subjecting the dielectrics to 60Co gamma irradiation. Our results strongly suggest the potential of a very simple measurement, near zero field magnetoresistance, as a reliability physics tool in the investigation of transport mechanisms in these materials.","PeriodicalId":436183,"journal":{"name":"2016 IEEE International Integrated Reliability Workshop (IIRW)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Integrated Reliability Workshop (IIRW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2016.7904912","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

We investigate leakage currents in a-SiOC:H thin films with electrically detected magnetic resonance (EDMR) and new zero field magnetoresistance measurements. We substantially change leakage currents by subjecting the dielectrics to 60Co gamma irradiation. Our results strongly suggest the potential of a very simple measurement, near zero field magnetoresistance, as a reliability physics tool in the investigation of transport mechanisms in these materials.
致密多孔低k介电介质中的辐射感应泄漏电流
我们用电检测磁共振(EDMR)和新的零场磁阻测量方法研究了a-SiOC:H薄膜中的泄漏电流。我们通过对电介质进行60Co γ辐射,大大改变了泄漏电流。我们的研究结果强烈地表明,在研究这些材料的输运机制时,一种非常简单的测量方法,即接近零的磁场磁电阻,是一种可靠的物理工具。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信