Thermal stability of ultra-thin InGaAs-on-insulator substrates

Abstract

Ultra-thin-body on buried oxide (UTBB) InGaAs are promising layers for the next generation of transistors. One way to fabricate InGaAs layer on Si or SiGe substrates is the direct wafer bonding technique with ion implantation and thermal splitting. We have investigated the bonding energy of two possible candidates for the buried oxide (BOX), Al2O3 and SiO2, between room temperature and 450°C. Then we have compared the properties of InAlAs, InP and InGaAs buffers for the implantation and splitting processes.