Concurrent dual-band CMOS low noise amplifiers and receiver architectures

H. Hashemi, A. Hajimiri
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引用次数: 99

Abstract

A new concurrent dual-band receiver architecture is introduced that is capable of simultaneous operation at two different frequency bands. The concurrent operation results in higher bandwidth, lower total power dissipation and less sensitivity to channel variations. The architecture uses a novel concurrent dual-band low noise amplifier (LNA), combined with an elaborate frequency conversion scheme to reject the image bands. A general methodology for the design of concurrent LNAs is provided that makes it possible to achieve simultaneous narrowband gain and matching at multiple frequencies. The methodology is demonstrated by implementing an integrated dual-band concurrent LNA using 0.35 /spl mu/m CMOS transistors. The LNA provides narrow-band gain and matching at 2.45 GHz and 5.25 GHz bands, simultaneously. It drains 4 mA of current and achieves voltage gains of 14 dB and 15.5 dB, input return losses of 25 dB and 15 dB, and noise figures of 2.3 dB and 4.5 dB at these two bands, respectively.
并发双频CMOS低噪声放大器和接收器架构
提出了一种能够在两个不同频段同时工作的双频并发接收机结构。并发操作的结果是更高的带宽,更低的总功耗和对信道变化的敏感度较低。该架构采用了一种新型的并发双频低噪声放大器(LNA),并结合了一种精心设计的变频方案来抑制图像频带。提供了一种设计并发LNAs的通用方法,使其能够在多个频率上实现同时窄带增益和匹配。通过使用0.35 /spl mu/m CMOS晶体管实现集成双带并发LNA,验证了该方法。LNA同时提供窄带增益和2.45 GHz和5.25 GHz频段的匹配。它消耗4 mA电流,在这两个频段分别获得14 dB和15.5 dB的电压增益,25 dB和15 dB的输入回波损耗,2.3 dB和4.5 dB的噪声系数。
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