Advanced RF IV Waveform Engineering Tool for Use in Device Technology Optimization: RF Pulsed Fully Active Harmonic Load Pull with Synchronized 3eV Laser
M. Casbon, P. Tasker, Wei-Chou Wang, Che-Kai Lin, Wen-Kai Wang, W. Wohlmuth
{"title":"Advanced RF IV Waveform Engineering Tool for Use in Device Technology Optimization: RF Pulsed Fully Active Harmonic Load Pull with Synchronized 3eV Laser","authors":"M. Casbon, P. Tasker, Wei-Chou Wang, Che-Kai Lin, Wen-Kai Wang, W. Wohlmuth","doi":"10.1109/CSICS.2013.6659212","DOIUrl":null,"url":null,"abstract":"The RF performance obtainable from a device often falls short of the expectations raised by analysis of the DCIV curves. This difference is typically associated with thermal or trapping effects. Hence, RF performance is traditionally assessed using load pull techniques, which can identify the optimum operating conditions, but cannot explain the shortfall. It has previously been shown that RF IV Waveform Engineering methods can give more insight to why there are differences without necessarily identifying their cause [1]. Here we show how adding RF pulse capability can help identify thermal contributions, and a synchronized 3eV Laser excitation can help identify and clear trapping contributions. Together these methods provide a powerful diagnostic tool for device technology optimization.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2013.6659212","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The RF performance obtainable from a device often falls short of the expectations raised by analysis of the DCIV curves. This difference is typically associated with thermal or trapping effects. Hence, RF performance is traditionally assessed using load pull techniques, which can identify the optimum operating conditions, but cannot explain the shortfall. It has previously been shown that RF IV Waveform Engineering methods can give more insight to why there are differences without necessarily identifying their cause [1]. Here we show how adding RF pulse capability can help identify thermal contributions, and a synchronized 3eV Laser excitation can help identify and clear trapping contributions. Together these methods provide a powerful diagnostic tool for device technology optimization.