The simulation breakdown characteristic of 4H-SiC SBD with edge termination extension

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI:10.1109/IWJT.2004.1306789

Hongliang Lv, Yimen Zhang, Yu-Ming Zhang

引用次数: 1

Abstract

A numerical model for 4H-SiC Schottky barrier diode is presented in this paper and the breakdown performances are achieved. The influence of the edge termination extension on the breakdown characteristic is calculated and analyzed in detail.

查看原文本刊更多论文

边端延伸的4H-SiC SBD击穿特性仿真

本文建立了4H-SiC肖特基势垒二极管的数值模型，得到了其击穿性能。详细计算和分析了端部延伸对击穿特性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

The Fourth International Workshop on Junction Technology, 2004. IWJT '04.

自引率

0.00%

发文量