Measurement of IGBT trench MOS-gated region characteristics using short turn-around-time MOSFET test structures

Abstract

Trench MOSFET test structures were fabricated for evaluating IGBT MOS-gated region performance. It was found that the test structures can be used for measuring saturation and sub-threshold current, though accurate estimation of linear resistance is difficult. Charge pumping measurement can be used to evaluate the oxide/substrate interface quality, for possible application to process optimization.