Ultrathin 400V FS IGBT for HEV applications

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs Pub Date : 2011-05-23 DOI:10.1109/ISPSD.2011.5890791

Heike Boving, T. Laska, A. Pugatschow, W. Jakobi

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引用次数: 12

Abstract

400V IGBT and freewheeling diode as well based on 40μm thin wafer technology have been developed for electric and hybrid electric vehicles with a DC link voltage of 120V to 200V. First prototype ultrathin devices worldwide showed clearly reduced overall losses since both on state and switching losses are directly dependent on the chip thickness. The new 40μm chips also exhibited a very high dI/dt during switching resulting in high voltage overshoots exceeding the maximum allowed breakdown voltage of 400V. For this reason an overall stray inductance as small as possible is required to make use of the fast switching behavior of the new devices. Optimization of the switching behavior of both IGBT and Diode could be obtained by adapting dI/dt to an overall stray inductance of 33nH but still with reduced losses at the same time. On state voltage of both IGBT and Diode could be decreased by about 200mV. Turn off energy loss could be decreased by 10%, total losses of IGBT and Diode during turn on could be reduced by about 10% in comparison to standard 650V devices

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用于HEV应用的超薄400V FS IGBT

在直流电压为120V ~ 200V的电动汽车和混合动力汽车上，已经开发出了基于40μm薄晶片技术的400V IGBT和自由旋转二极管。世界范围内的第一个超薄器件原型显示出明显降低的总体损耗，因为导通状态和开关损耗都直接取决于芯片厚度。新的40μm芯片在开关过程中也表现出非常高的dI/dt，导致高电压过调，超过最大允许击穿电压400V。因此，为了利用新器件的快速开关特性，需要尽可能小的总杂散电感。通过将dI/dt调整为总杂散电感33nH，同时仍能降低损耗，可以优化IGBT和二极管的开关行为。IGBT和二极管的导通电压均可降低约200mV。与标准650V器件相比，关断能量损耗可降低10%，IGBT和二极管在开断期间的总损耗可降低约10%

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs

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