Circuit characteristics of molecular electronic components

D. Janes, Subhasis Ghosh, Jaewon Choi, S. Lodha
{"title":"Circuit characteristics of molecular electronic components","authors":"D. Janes, Subhasis Ghosh, Jaewon Choi, S. Lodha","doi":"10.1109/ASAP.2003.1212836","DOIUrl":null,"url":null,"abstract":"Electronic devices based on single molecules, or small assemblies of molecules, are attracting much attention as intrinsically nanoscale devices that can add functionality such as optical emission and nonvolatile storage to silicon-based electronics. One of the key issues in these devices is the nature of the microscopic contacts to the active molecules and the need to develop well-controlled interfaces in order to achieve low-resistance contacts. We describe the formation of suitable contact structures in the form of nanometer scale \"break junctions\" in gold lines, formed by lithographic or electrical means. The structure provides a lead frame for realizing high-quality contacts to nanometer-size molecules and nanoparticles with selective docking achieved by end-groups such as thiol (-SH). Metal-molecule-metal junctions can be formed by chemisorbing short molecules such as 1,4-benzenedithiol on the two electrodes. Current-voltage (I-V) characteristics have been measured for configurations including small numbers of molecules directly bonded in the junction and molecule/nanocluster/molecule assemblies. These junctions are being used as test beds to study electrical conduction through different types of engineered-molecules, and to subsequently develop circuit level models. By integrating these molecules with electrical contacts, selective microscopic events (e.g. doping events or gas docking) can be coupled to external circuitry.","PeriodicalId":261592,"journal":{"name":"Proceedings IEEE International Conference on Application-Specific Systems, Architectures, and Processors. ASAP 2003","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE International Conference on Application-Specific Systems, Architectures, and Processors. ASAP 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASAP.2003.1212836","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Electronic devices based on single molecules, or small assemblies of molecules, are attracting much attention as intrinsically nanoscale devices that can add functionality such as optical emission and nonvolatile storage to silicon-based electronics. One of the key issues in these devices is the nature of the microscopic contacts to the active molecules and the need to develop well-controlled interfaces in order to achieve low-resistance contacts. We describe the formation of suitable contact structures in the form of nanometer scale "break junctions" in gold lines, formed by lithographic or electrical means. The structure provides a lead frame for realizing high-quality contacts to nanometer-size molecules and nanoparticles with selective docking achieved by end-groups such as thiol (-SH). Metal-molecule-metal junctions can be formed by chemisorbing short molecules such as 1,4-benzenedithiol on the two electrodes. Current-voltage (I-V) characteristics have been measured for configurations including small numbers of molecules directly bonded in the junction and molecule/nanocluster/molecule assemblies. These junctions are being used as test beds to study electrical conduction through different types of engineered-molecules, and to subsequently develop circuit level models. By integrating these molecules with electrical contacts, selective microscopic events (e.g. doping events or gas docking) can be coupled to external circuitry.
分子电子元件的电路特性
基于单分子或小分子组合的电子器件,由于其本质上是纳米级的器件,可以在硅基电子器件中添加光学发射和非易失性存储等功能,正引起人们的广泛关注。这些器件的关键问题之一是与活性分子的微观接触的性质,以及开发良好控制的界面以实现低电阻接触的需要。我们描述了在金线中以纳米尺度“断结”的形式形成合适的接触结构,通过光刻或电手段形成。该结构为实现与纳米级分子和纳米颗粒的高质量接触提供了引线框架,并通过巯基(-SH)等端基实现了选择性对接。金属-分子-金属结可以通过化学吸附短分子如1,4-苯二硫醇在两个电极上形成。电流-电压(I-V)特性已经被测量,包括直接结合在结中的少量分子和分子/纳米簇/分子组件。这些连接点被用作研究通过不同类型的工程分子导电的试验台,并随后开发电路级模型。通过将这些分子与电触点集成,选择性微观事件(例如掺杂事件或气体对接)可以耦合到外部电路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信