Structural modifications of the thick polysilicon layers on silicon during phosphorus diffusion: contributing mechanisms

Abstract

TEM investigations of the LP-LT-CVD thick (1500 nm) polySi layer on 16 nm SiO/sub 2//Si allow one to introduce specific mechanisms to explain the fast polySi regrowth and the SiO/sub 2/ degradation during a short-time (15 min.) moderate (1030/spl deg/C) heat-temperature treatment and during a subsequent 20 min., 1030/spl deg/C annealing.