Modeling issues for advanced bipolar device/circuit simulation

Abstract

Physical mechanisms that govern the operation of advanced bipolar transistors (BJTs), but are not represented well in compact circuit (e.g. SPICE) models, are overviewed. Conventional circuit models for BJTs are reviewed to reveal their deficiencies. Then it is shown how the important mechanisms in the advanced BJT can be properly accounted for by seminumerical physical models, based on multilevel Newton-like iterative methods of solving carrier transport, written into the circuit-simulator source code.<>