A ring oscillator based reliability structure for NBTI & PBTI measurement

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628048

Xiqing Wang, J. Hong, Yandong He, Ganggang Zhang, Lin Han, Xing Zhang

引用次数: 0

Abstract

A ring oscillator based structure in digital circuits is presented for measuring NBTI and PBTI effects. The proposed test structure enables simultaneous stress of all devices under tests in either NBTI or PBTI mode and measures frequency degradation or the threshold voltage shift. The threshold voltage shift due to NBTI or PBTI can be directly read out in the proposed circuit which has been designed in a 1.2V, 90nm technology.

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一种基于环形振荡器的NBTI和PBTI测量可靠性结构

提出了一种基于环形振荡器的数字电路结构，用于测量NBTI和PBTI效应。所提出的测试结构能够在NBTI或PBTI模式下同时测试所有设备的应力，并测量频率退化或阈值电压偏移。该电路采用1.2V、90nm工艺设计，可直接读出由NBTI或PBTI引起的阈值电压偏移。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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