Microstructures for fracture toughness characterization of brittle thin films

Abstract

A simple one-mask technique for characterizing fracture design parameters has been applied to tensile-stressed low-pressure chemical vapor deposited silicon nitride films. The design parameter obtained is the critical geometry parameter, which can be converted into fracture toughness by multiplying by the residual stress. Values of this parameter range from 14 to 290 mu m/sup 1/2/. Corresponding K/sub I/ values are from 4.2 MPa-m/sup 1/2/ to 87 MPa-m/sup 1/2/, assuming a residual stress of 300 MPa. Fabrication and test results are presented.<>